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MS46H64M32L2SB-6C

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MS46H64M32L2SB-6C

64MX32, 5.5ns, CMOS, PBGA152

Manufacturer: Microchip Technology

Categories: DRAMs

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The Microchip Technology MS46H64M32L2SB-6C is a LPDDR1 DRAM component offering a memory organization of 64M words by 32 bits, resulting in a total density of 2 Gigabit. This CMOS device features a maximum access time of 5.5 ns and operates in synchronous mode with a four-bank page burst access mode. Key functionalities include auto and self-refresh capabilities. The component is housed in a 152-ball PBGA (JESD_30 Code: S-PBGA-B152) package with a fine pitch of 0.65 mm, suitable for surface mounting. It operates within a temperature range of 0°C to 70°C and has a supply voltage range of 1.7V to 1.95V. This component is widely utilized in industrial automation, communications infrastructure, and consumer electronics applications demanding high-speed memory solutions.

Additional Information

Series: MS46H64M32RoHS Status: Manufacturer Lead Time: Product Status: Active-UnconfirmedPackaging: Datasheet:
Technical Details:
Length14.0000
Width14.0000
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max5.5000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeS-PBGA-B152
Memory_Density2147483648.0000000000000000
Memory_IC_TypeLPDDR1 DRAM
Memory_Organization64MX32
Memory_Width32
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals152
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeLFBGA
Package_ShapeSquare
Package_StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Seated_Height_Max1.2800
Self_RefreshYes
Supply_Voltage_Max1.95000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountYes
Terminal_FormBall
Terminal_Pitch0.650
Terminal_PositionBottom

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