JAN1N5711UBD/TR
DIODE ARRAY SCHOTTKY 50V 33MA UBManufacturer: Microchip Technology
Categories: Diode Arrays
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The Microchip Technology JAN1N5711UBD-TR is a military-grade diode array featuring a Schottky technology. This component is configured as a single pair of diodes connected in series, offering a maximum DC reverse voltage of 50V. Each diode in the array is rated for an average rectified current (Io) of 33mA, with a typical forward voltage (Vf) of 1V at 15mA. The reverse leakage current at its maximum reverse voltage is a low 200 nA at 50V. Designed for surface mounting, it is provided in a 3-SMD, No Lead package, specifically the UB type, and is supplied on tape and reel. This device is specified for operation across a wide temperature range of -65°C to 150°C and meets MIL-PRF-19500/444 qualification standards. Its characteristics make it suitable for applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Diode Configuration | 1 Pair Series Connection |
| Current - Average Rectified (Io) (per Diode) | 33mA |
| Supplier Device Package | UB |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 15 mA |
| Current - Reverse Leakage @ Vr | 200 nA @ 50 V |
| Qualification | MIL-PRF-19500/444 |