1N6770
DIODE ARRAY GP 150V 8A TO257Manufacturer: Microchip Technology
Categories: Diode Arrays
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Microchip Technology's 1N6770 diode array offers a robust solution for robust power management applications. This component features a common cathode configuration, comprising two diodes rated for a maximum DC reverse voltage of 150 V. Each diode supports an average rectified forward current of 8 A (DC) with a typical forward voltage drop of 1.06 V at 8 A. The device exhibits a reverse leakage current of 10 µA at 120 V. With a fast recovery time of 35 ns, it is suitable for applications requiring efficient switching. The TO-257-3 package facilitates through-hole mounting. This diode array is commonly utilized in industrial power supplies, automotive electronics, and general-purpose rectification.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 8A (DC) |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | - |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 1.06 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 120 V |