1N6769R
DIODE ARRAY GP 100V 8A TO257Manufacturer: Microchip Technology
Categories: Diode Arrays
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Microchip Technology's 1N6769R is a high-performance diode array designed for demanding applications. This component features a 1-pair common anode configuration, providing a maximum DC reverse voltage (Vr) of 100V. Each diode within the array offers an average rectified current (Io) of 8A (DC) and a low forward voltage (Vf) of 1.06V at 8A. The reverse leakage current is specified at 10 µA @ 80 V. With a fast reverse recovery time (trr) of 35 ns, this diode array is suitable for applications requiring efficient switching. The TO-257-3 package enables through-hole mounting for robust integration. This component finds utility in power supply rectification, motor control, and other industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 8A (DC) |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | - |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.06 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 80 V |