1N6768R
DIODE ARRAY GP 50V 8A TO257Manufacturer: Microchip Technology
Categories: Diode Arrays
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Microchip Technology's 1N6768R is a diode array featuring a common anode configuration. This component offers a DC reverse voltage rating of 50V and a forward voltage drop of 1.06V at 8A. The diode array exhibits a reverse leakage current of 10 µA at 40V and a reverse recovery time of 35 ns, classifying it as a fast recovery diode. It is housed in a TO-257-3 package with a through-hole mounting type. This device is suitable for applications requiring efficient rectification and switching, commonly found in power supply circuits and automotive electronics. The 1N6768R is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 8A (DC) |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | - |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.06 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 40 V |