1N6767R
DIODE ARRAY GP 600V 12A TO254AAManufacturer: Microchip Technology
Categories: Diode Arrays
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The Microchip Technology 1N6767R is a diode array featuring a common anode configuration with two diodes. This component offers a maximum DC reverse voltage (Vr) of 600 V and an average rectified current (Io) per diode of 12 A. It boasts a forward voltage (Vf) of 1.55 V at 12 A and a reverse leakage current of 10 µA at 480 V. The device operates within a junction temperature range of -55°C to 175°C and utilizes a fast recovery technology with a reverse recovery time (trr) of 60 ns. Packaged in a TO-254AA (TO-254-3) through-hole package, this diode array is suitable for applications in power supply rectification and general-purpose high-current switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 12A (DC) |
| Supplier Device Package | TO-254AA |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 12 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 480 V |