1N6766R
DIODE ARRAY GP 400V 12A TO254AAManufacturer: Microchip Technology
Categories: Diode Arrays
Quality Control: Learn More
Microchip Technology's 1N6766R is a dual diode array featuring a common anode configuration, designed for high-power rectification. This component offers a repetitive peak reverse voltage (Vrrm) of 400V and a continuous average forward current (Io) of 12A per diode. With a fast recovery time of 60 ns, it is suitable for applications requiring efficient switching. The forward voltage drop (Vf) is specified at a maximum of 1.55V at 12A. The device operates within a junction temperature range of -55°C to 175°C and exhibits a low reverse leakage current of 10 µA at 320V. Packaged in a TO-254AA (TO-254-3) through-hole package, the 1N6766R is utilized in power supply rectification, motor control, and industrial power applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 12A (DC) |
| Supplier Device Package | TO-254AA |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 12 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 320 V |