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SG2013J-883B

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SG2013J-883B

TRANS 7NPN DARL 50V 0.6A 16JDIP

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case-
Mounting TypeThrough Hole
Transistor Type7 NPN Darlington
Operating Temperature150°C (TJ)
Power - Max-
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1.9V @ 600µA, 500mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce900 @ 500mA, 2V
Frequency - Transition-
Supplier Device Package16-CDIP

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