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R2N2920A

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R2N2920A

RH DUAL - SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

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Microchip Technology R2N2920A is a dual NPN bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. This through-hole component offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA. The device features a minimum DC current gain (hFE) of 300 at 1mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 300mV with a base current of 100µA and collector current of 1mA. The maximum power dissipation is 350mW, and it operates across a junction temperature range of -65°C to 200°C. This component is suitable for applications in industrial and military sectors requiring precise signal amplification and switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 NPN (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6

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