R2N2920A
RH DUAL - SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology R2N2920A is a dual NPN bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. This through-hole component offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA. The device features a minimum DC current gain (hFE) of 300 at 1mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is specified at a maximum of 300mV with a base current of 100µA and collector current of 1mA. The maximum power dissipation is 350mW, and it operates across a junction temperature range of -65°C to 200°C. This component is suitable for applications in industrial and military sectors requiring precise signal amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |