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JANTXV2N5794U/TR

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JANTXV2N5794U/TR

DUAL SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology's JANTXV2N5794U-TR is a dual NPN bipolar junction transistor array designed for demanding applications. This surface-mount component, packaged in a 6-SMD, No Lead U configuration on tape and reel, features a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. The device offers a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a saturation voltage (Vce Sat) of 900mV at 30mA/300mA. It maintains a low collector cutoff current of 10µA (ICBO) and a maximum power dissipation of 600mW. Qualified to MIL-PRF-19500/495 and operating across a wide temperature range of -65°C to 200°C, this transistor array is suitable for military and high-reliability systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic900mV @ 30mA, 300mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageU
GradeMilitary
QualificationMIL-PRF-19500/495

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