JANTXV2N2920U
TRANS 2NPN 60V 0.03AManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANTXV2N2920U is a dual NPN bipolar junction transistor (BJT) array designed for demanding applications. This JANTXV qualified component offers a 60V collector-emitter breakdown voltage and a maximum collector current of 30mA. With a minimum DC current gain (hFE) of 300 at 1mA and 5V, it provides robust amplification characteristics. The device features a low collector cutoff current (ICBO) of 10µA and a Vce saturation voltage of 300mV at 100µA base current and 1mA collector current. Rated for 350mW power dissipation, the JANTXV2N2920U operates reliably at junction temperatures up to 200°C. Its 6-SMD, No Lead package is suitable for surface mounting and adheres to MIL-PRF-19500/355 specifications. This component is frequently utilized in aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/355 |