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JANTXV2N2920U

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JANTXV2N2920U

TRANS 2NPN 60V 0.03A

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANTXV2N2920U is a dual NPN bipolar junction transistor (BJT) array designed for demanding applications. This JANTXV qualified component offers a 60V collector-emitter breakdown voltage and a maximum collector current of 30mA. With a minimum DC current gain (hFE) of 300 at 1mA and 5V, it provides robust amplification characteristics. The device features a low collector cutoff current (ICBO) of 10µA and a Vce saturation voltage of 300mV at 100µA base current and 1mA collector current. Rated for 350mW power dissipation, the JANTXV2N2920U operates reliably at junction temperatures up to 200°C. Its 6-SMD, No Lead package is suitable for surface mounting and adheres to MIL-PRF-19500/355 specifications. This component is frequently utilized in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device Package6-SMD
GradeMilitary
QualificationMIL-PRF-19500/355

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