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JANTX2N6989U/TR

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JANTX2N6989U/TR

TRANSISTOR QUAD SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANTX2N6989U-TR is a quad NPN bipolar junction transistor (BJT) array designed for demanding applications. This component, conforming to MIL-PRF-19500/559 qualification, features four independent NPN transistors in a single 20-CLCC package suitable for surface mounting. Each transistor offers a collector-emitter breakdown voltage of up to 50V, with a maximum collector current of 800mA and a power dissipation of 1W. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V Vce, and a Vce saturation voltage of 1V at 50mA base current and 500mA collector current. The JANTX2N6989U-TR operates across an extended temperature range of -65°C to 200°C, making it suitable for aerospace, defense, and industrial applications requiring high reliability and performance. The component is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case20-CLCC
Mounting TypeSurface Mount
Transistor Type4 NPN (Quad)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1W
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device Package20-CLCC
GradeMilitary
QualificationMIL-PRF-19500/559

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