JANTX2N5796U/TR
TRANSISTOR DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANTX2N5796U-TR is a dual PNP bipolar junction transistor (BJT) array designed for demanding applications. This surface-mount device, supplied in Tape & Reel (TR) packaging, features two independent PNP transistors within a 6-SMD, No Lead package. It offers a collector-emitter breakdown voltage (Vce) of 60V and a maximum collector current (Ic) of 600mA. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a power dissipation of 600mW. Collector cutoff current (ICBO) is a maximum of 10nA. This component is qualified to MIL-PRF-19500/496 and operates across a wide temperature range of -65°C to 175°C, making it suitable for military and aerospace applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/496 |