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JANTX2N5796U/TR

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JANTX2N5796U/TR

TRANSISTOR DUAL SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANTX2N5796U-TR is a dual PNP bipolar junction transistor (BJT) array designed for demanding applications. This surface-mount device, supplied in Tape & Reel (TR) packaging, features two independent PNP transistors within a 6-SMD, No Lead package. It offers a collector-emitter breakdown voltage (Vce) of 60V and a maximum collector current (Ic) of 600mA. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a power dissipation of 600mW. Collector cutoff current (ICBO) is a maximum of 10nA. This component is qualified to MIL-PRF-19500/496 and operates across a wide temperature range of -65°C to 175°C, making it suitable for military and aerospace applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 175°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device Package6-SMD
GradeMilitary
QualificationMIL-PRF-19500/496

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