Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar Transistor Arrays

JANTX2N2920L

Banner
productimage

JANTX2N2920L

TRANS 2NPN 60V 0.03A TO78

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

The Microchip Technology JANTX2N2920L is a dual NPN bipolar junction transistor array designed for demanding applications. This component features a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA. It offers a minimum DC current gain (hFE) of 300 at 1mA and 5V, with a Vce saturation of 300mV at 100µA and 1mA. The JANTX2N2920L has a maximum collector cutoff current (ICBO) of 10µA and a power dissipation of 350mW. Packaged in a TO-78-6 metal can, this through-hole mounted device operates at temperatures up to 200°C (TJ). This device meets the MIL-PRF-19500/355 qualification, indicating its suitability for military and high-reliability applications, including aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 NPN (Dual)
Operating Temperature200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/355

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
JANTXV2N5794U/TR

DUAL SMALL-SIGNAL BJT

product image
JANTXV2N6989U/TR

TRANSISTOR QUAD SMALL-SIGNAL BJT

product image
JANS2N3810U/TR

TRANSISTOR DUAL SMALL-SIGNAL BJT