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JANTX2N2919U/TR

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JANTX2N2919U/TR

TRANSISTOR DUAL SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANTX2N2919U-TR is a dual NPN bipolar junction transistor array designed for surface mount applications. This device offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA, with a power dissipation rating of 350mW. Featuring a minimum DC current gain (hFE) of 150 at 1mA and 5V, this transistor array is qualified to MIL-PRF-19500/355, indicating its suitability for demanding military applications. The JANTX2N2919U-TR is supplied in a 6-SMD, No Lead package on tape and reel. It finds application in sensitive analog signal processing and switching circuits within aerospace and defense sectors. The Vce saturation is a maximum of 300mV at 100µA base current and 1mA collector current.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageU
GradeMilitary
QualificationMIL-PRF-19500/355

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