JANSR2N3810U
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology's JANSR2N3810U is a high-reliability bipolar transistor array featuring two discrete PNP transistors in a single 6-SMD package. This component is designed for demanding applications, offering a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. With a power dissipation rating of 350mW, it is suitable for operation across a wide temperature range of -65°C to 200°C. The device boasts a minimum DC current gain (hFE) of 150 at 1mA and 5V, and a saturation voltage of 250mV at 1mA, 100µA. Qualified to MIL-PRF-19500/336, this transistor array is commonly utilized in aerospace, defense, and industrial sectors requiring robust performance and extended operational life.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 100µA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
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