JANSR2N3810
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANSR2N3810 is a dual PNP bipolar junction transistor array housed in a TO-78-6 metal can package. This military-grade component, qualified to MIL-PRF-19500/336, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. It features a minimum DC current gain (hFE) of 150 at 1mA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at a maximum of 250mV with 100µA base current and 1mA collector current. With a maximum power dissipation of 350mW and an operating temperature range of -65°C to 200°C, this transistor array is suitable for demanding applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
Request a Quote
Clients Also Buy
SG2013J
DRIVER - MEDIUM CURRENT ARRAY, H
2N6989
TRANS 4NPN 50V 0.8A TO116
JANTXV2N5794U/TR
DUAL SMALL-SIGNAL BJT
