JANSR2N2920U
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANSR2N2920U is a dual NPN bipolar junction transistor array. This surface-mount device, housed in a 6-SMD, No Lead package, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 30mA. It features a minimum DC current gain (hFE) of 300 at 1mA and 5V, with a Vce(sat) of 300mV at 100µA and 1mA. The component is rated for 350mW maximum power dissipation and operates across a wide temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/355, this device is suitable for demanding applications in aerospace and defense.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/355 |
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