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JANSR2N2920

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JANSR2N2920

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology's JANSR2N2920 is a high-reliability, dual NPN bipolar junction transistor array housed in a TO-78-6 metal can package. This through-hole component is rated for a collector-emitter breakdown voltage of 60V and a continuous collector current of up to 30mA. It offers a minimum DC current gain (hFE) of 300 at 1mA collector current and 5V Vce. The device features low collector cutoff current (ICBO) of 10µA maximum and a saturation voltage (Vce(sat)) of 300mV maximum at 100µA base current and 1mA collector current. With a maximum power dissipation of 350mW and an operating temperature range of -65°C to 200°C, this MIL-PRF-19500 qualified component is suitable for demanding applications in aerospace and defense, industrial control, and high-reliability electronic systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 NPN (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500

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