JANSL2N3810U
DUAL RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANSL2N3810U is a dual PNP bipolar junction transistor array designed for demanding applications. This component offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. The DC current gain (hFE) is a minimum of 150 at 1mA collector current and 5V collector-emitter voltage. The device features a low collector cutoff current of 10µA (ICBO) and a Vce saturation of 250mV at 100µA base current and 1mA collector current. With a maximum power dissipation of 350mW and an operating temperature range of -65°C to 200°C, this transistor array is suitable for military-grade applications. It is supplied in a 6-SMD, No Lead package and meets the MIL-PRF-19500/336 qualification.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | U |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
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