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JANSF2N6987

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JANSF2N6987

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

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Microchip Technology JANSF2N6987 is a military-grade bipolar transistor array featuring four PNP elements in a quad configuration. This through-hole component, housed in a TO-116 (14-DIP) package, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. With a maximum power dissipation of 1.5W and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this device is suitable for demanding applications. It operates across an extended temperature range of -65°C to 200°C. The JANSF2N6987 meets MIL-PRF-19500/558 qualification standards, indicating its suitability for aerospace and defense systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case14-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Transistor Type4 PNP (Quad)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1.5W
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-116
GradeMilitary
QualificationMIL-PRF-19500/558

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