JANSF2N3810U
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANSF2N3810U is a bipolar transistor array featuring two PNP (dual) transistors. This component is designed for demanding applications, operating with a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. The device boasts a minimum DC current gain (hFE) of 150 at 1mA collector current and 5V collector-emitter voltage. For critical applications, the saturation voltage (Vce Sat) is typically 250mV at 100µA base current and 1mA collector current. The JANSF2N3810U is rated for a maximum power dissipation of 350mW and operates across an extended temperature range of -65°C to 200°C. Qualified to MIL-PRF-19500/336, this transistor array is suitable for military and aerospace sectors, as well as industrial and high-reliability electronic systems. It is supplied in a 6-SMD, No Lead package for surface mounting.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
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