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JANSF2N2920L

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JANSF2N2920L

RH SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANSF2N2920L is a military-grade bipolar junction transistor (BJT) array featuring two NPN transistors in a TO-78-6 metal can package. This device offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 30mA. The JANSF2N2920L exhibits a minimum DC current gain (hFE) of 300 at 1mA and 5V, with a Vce saturation of 300mV at 100µA and 1mA. It is qualified to MIL-PRF-19500 standards and operates across a temperature range of -65°C to 200°C. The through-hole mounting type and 350mW power dissipation make it suitable for applications in aerospace, defense, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 NPN (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500

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