JANSD2N3810
DUAL RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANSD2N3810 is a dual PNP bipolar junction transistor (BJT) array housed in a TO-78-6 metal can package. This military-grade component, qualified to MIL-PRF-19500/336, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. The device exhibits a minimum DC current gain (hFE) of 150 at 1mA collector current and 5V collector-emitter voltage. Maximum power dissipation is 350mW, with a saturation voltage (Vce(sat)) of 250mV at 100µA base current and 1mA collector current. The collector cutoff current (ICBO) is a maximum of 10µA. This through-hole mounted component is suitable for applications in aerospace, defense, and high-reliability industrial systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
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