JANS2N6990
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANS2N6990 is a 4 NPN (Quad) bipolar transistor array, qualified to MIL-PRF-19500/559. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. Designed for surface mount applications, it is housed in a 14-Flatpack package. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 1V at 50mA and 500mA. The maximum collector cutoff current is 10µA (ICBO). This component is rated for a maximum power dissipation of 400mW and operates across a wide temperature range of -65°C to 200°C. Applications include military and high-reliability electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 14-Flatpack |
| Mounting Type | Surface Mount |
| Transistor Type | 4 NPN (Quad) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | 14-Flatpack |
| Grade | Military |
| Qualification | MIL-PRF-19500/559 |