JANS2N6989
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANS2N6989 is a bipolar junction transistor (BJT) array featuring four NPN transistors. This through-hole component adheres to MIL-PRF-19500/559 qualification, suitable for demanding military applications. Each transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA, with a power dissipation capability of 1.5W. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 1V at 50mA/500mA. Collector cutoff current is specified at a maximum of 10µA (ICBO). Housed in a TO-116 package, specifically a 14-DIP (0.300", 7.62mm) configuration, it operates within a temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 14-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Transistor Type | 4 NPN (Quad) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 1.5W |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-116 |
| Grade | Military |
| Qualification | MIL-PRF-19500/559 |