JANS2N6988
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANS2N6988 is a high-reliability PNP bipolar junction transistor array featuring four independent PNP transistors. This component is qualified to MIL-PRF-19500/558, ensuring suitability for demanding applications. Each transistor offers a collector current capability of up to 600mA and a collector-emitter breakdown voltage of 60V. The minimum DC current gain (hFE) is 100 at 150mA and 10V. Designed for through-hole mounting, the device is housed in a TO-116 package, also known as 14-DIP. With a maximum power dissipation of 400mW and an operating temperature range of -65°C to 200°C (TJ), the JANS2N6988 is well-suited for aerospace, defense, and other critical systems requiring robust performance. The Vce(sat) is rated at 1.6V maximum at 50mA base current and 500mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 14-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Transistor Type | 4 PNP (Quad) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-116 |
| Grade | Military |
| Qualification | MIL-PRF-19500/558 |