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JANS2N6987U

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JANS2N6987U

PNP TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology's JANS2N6987U is a high-reliability, military-grade PNP bipolar transistor array. This quad transistor configuration features four independent PNP transistors in a single 6-SMD package, suitable for demanding applications. Each transistor offers a collector current capability of up to 600mA and a collector-emitter breakdown voltage of 60V. The device boasts a maximum power dissipation of 1W and a junction temperature range of -65°C to 200°C, making it ideal for harsh environments. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a collector cutoff current (ICBO) of 10µA (max), it provides robust performance. The JANS2N6987U is qualified to MIL-PRF-19500/558 standards, ensuring its suitability for aerospace and defense systems. Its surface mount design facilitates efficient assembly in complex electronic systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type4 PNP (Quad)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1W
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device Package6-SMD
GradeMilitary
QualificationMIL-PRF-19500/558

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