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JANS2N6987

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JANS2N6987

PNP TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANS2N6987 is a quad PNP bipolar junction transistor array qualified to MIL-PRF-19500/558. This military-grade component features four independent PNP transistors in a single TO-116 package, designated as 14-DIP (0.300", 7.62mm). Each transistor offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current (Ic) of 600mA. The maximum power dissipation is 1.5W, with a typical Vce(sat) of 1.6V at 50mA base current and 500mA collector current. The DC current gain (hFE) is a minimum of 100 at 150mA collector current and 10V Vce. Operating temperature ranges from -65°C to 200°C (TJ). This device is suitable for applications in aerospace, defense, and high-reliability industrial systems requiring robust performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case14-DIP (0.300"", 7.62mm)
Mounting TypeThrough Hole
Transistor Type4 PNP (Quad)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1.5W
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-116
GradeMilitary
QualificationMIL-PRF-19500/558

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