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JANS2N5796UC/TR

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JANS2N5796UC/TR

DUAL SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANS2N5796UC-TR is a dual PNP bipolar transistor array designed for high-reliability applications. This surface-mount component, supplied in Tape & Reel (TR) packaging, features a 6-SMD, No Lead (UC) package. It offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at 1.6V maximum with 50mA base current and 500mA collector current. The maximum power dissipation is 600mW, with an operating temperature range of -65°C to 175°C. This component meets MIL-PRF-19500/496 qualification, indicating its suitability for demanding military and aerospace environments.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 175°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUC
GradeMilitary
QualificationMIL-PRF-19500/496

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