JANS2N5796U
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANS2N5796U is a military-grade, bipolar transistor array featuring two PNP transistors in a 6-SMD, No Lead package. This device offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, it provides robust amplification capabilities. The transistor array is designed for surface mount applications and operates across a wide temperature range of -65°C to 175°C. Key electrical parameters include a collector cutoff current of 10µA (ICBO) and a Vce saturation voltage of 1.6V at 50mA/500mA. This component is suitable for demanding applications in aerospace, defense, and industrial sectors requiring high reliability and performance. The JANS2N5796U is qualified under MIL-PRF-19500/496 and is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/496 |
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