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JANS2N5796U

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JANS2N5796U

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANS2N5796U is a military-grade, bipolar transistor array featuring two PNP transistors in a 6-SMD, No Lead package. This device offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, it provides robust amplification capabilities. The transistor array is designed for surface mount applications and operates across a wide temperature range of -65°C to 175°C. Key electrical parameters include a collector cutoff current of 10µA (ICBO) and a Vce saturation voltage of 1.6V at 50mA/500mA. This component is suitable for demanding applications in aerospace, defense, and industrial sectors requiring high reliability and performance. The JANS2N5796U is qualified under MIL-PRF-19500/496 and is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 175°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device Package6-SMD
GradeMilitary
QualificationMIL-PRF-19500/496

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