JANS2N5796A
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANS2N5796A is a bipolar junction transistor (BJT) array featuring two complementary PNP transistors within a TO-78-6 metal can package. This military-grade component is qualified to MIL-PRF-19500/496. It offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. Maximum power dissipation is rated at 600mW, with a collector cutoff current of 10µA (ICBO). The saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA base current and 500mA collector current. Operating temperature ranges from -65°C to 175°C. This transistor array is suitable for applications in aerospace, defense, and high-reliability industrial systems requiring robust performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/496 |
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