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JANS2N5796A

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JANS2N5796A

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANS2N5796A is a bipolar junction transistor (BJT) array featuring two complementary PNP transistors within a TO-78-6 metal can package. This military-grade component is qualified to MIL-PRF-19500/496. It offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. Maximum power dissipation is rated at 600mW, with a collector cutoff current of 10µA (ICBO). The saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA base current and 500mA collector current. Operating temperature ranges from -65°C to 175°C. This transistor array is suitable for applications in aerospace, defense, and high-reliability industrial systems requiring robust performance.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 175°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/496

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