JANS2N5796
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANS2N5796 is a military-grade bipolar junction transistor (BJT) array featuring two PNP transistors in a single TO-78-6 metal can package. This through-hole component is designed for demanding applications requiring high reliability and performance. Key specifications include a collector-emitter breakdown voltage (Vce) of 60V, a maximum collector current (Ic) of 600mA, and a maximum power dissipation of 600mW. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 1.6V at 50mA and 500mA. It operates across a wide temperature range of -65°C to 175°C. Qualified under MIL-PRF-19500/496, this transistor array is suitable for use in aerospace, defense, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/496 |
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