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JANS2N5795A

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JANS2N5795A

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology's JANS2N5795A is a military-grade bipolar transistor array featuring two PNP (dual) devices. This component is housed in a TO-78-6 metal can package, suitable for through-hole mounting. It offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. The device exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V, with a Vce saturation of 1.6V at 50mA and 500mA. The JANS2N5795A is qualified to MIL-PRF-19500/496, ensuring robust performance in demanding applications. Its operating temperature range spans from -65°C to 175°C. This component is utilized in aerospace and defense systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 175°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/496

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