JANS2N5794UC
DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JANS2N5794UC is a dual NPN bipolar junction transistor array designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/495, features two independent NPN transistors in a single UC (6-SMD, No Lead) surface mount package. It offers a maximum collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 600mA. With a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a low collector cutoff current of 10µA (ICBO), this device is suitable for high-reliability systems. The JANS2N5794UC boasts a maximum power dissipation of 600mW and an operating temperature range of -65°C to 200°C. It is commonly utilized in aerospace, defense, and other critical electronic systems requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UC |
| Grade | Military |
| Qualification | MIL-PRF-19500/495 |
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