JANS2N5794U
DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANS2N5794U is a dual small-signal bipolar junction transistor (BJT) array featuring two NPN transistors. This military-grade component, qualified to MIL-PRF-19500/495, is designed for demanding applications with a collector-emitter breakdown voltage of 40V. It offers a maximum collector current of 600mA and a power dissipation of 600mW in a surface-mount 6-SMD, No Lead package (U). Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce saturation of 900mV at 30mA collector current. The device operates across a wide temperature range of -65°C to 200°C. This component is commonly utilized in aerospace, defense, and industrial control systems requiring high reliability and performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U |
| Grade | Military |
| Qualification | MIL-PRF-19500/495 |
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