JANS2N3810U
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
The Microchip Technology JANS2N3810U is a dual PNP bipolar junction transistor (BJT) array designed for demanding applications. This surface-mount device, packaged in a 6-SMD configuration, offers a collector-emitter breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of up to 50mA. With a maximum power dissipation of 350mW and a wide operating temperature range of -65°C to 200°C, it meets stringent military-grade qualification requirements under MIL-PRF-19500/336. The device exhibits a minimum DC current gain (hFE) of 150 at 1mA and 5V. Key parameters include a collector cutoff current (Icbo) of 10µA (max) and a Vce saturation voltage of 250mV (max) at 100µA base current and 1mA collector current. This component is suitable for use in aerospace, defense, and other high-reliability electronic systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
Request a Quote
Clients Also Buy
2N2916
DUAL SMALL-SIGNAL BJT
JANSF2N3810
NPN TRANSISTOR
JANS2N5796
NPN TRANSISTOR
