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JANS2N3810U

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JANS2N3810U

PNP TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

The Microchip Technology JANS2N3810U is a dual PNP bipolar junction transistor (BJT) array designed for demanding applications. This surface-mount device, packaged in a 6-SMD configuration, offers a collector-emitter breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of up to 50mA. With a maximum power dissipation of 350mW and a wide operating temperature range of -65°C to 200°C, it meets stringent military-grade qualification requirements under MIL-PRF-19500/336. The device exhibits a minimum DC current gain (hFE) of 150 at 1mA and 5V. Key parameters include a collector cutoff current (Icbo) of 10µA (max) and a Vce saturation voltage of 250mV (max) at 100µA base current and 1mA collector current. This component is suitable for use in aerospace, defense, and other high-reliability electronic systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Frequency - Transition-
Supplier Device Package6-SMD
GradeMilitary
QualificationMIL-PRF-19500/336

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