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JANS2N3810

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JANS2N3810

PNP TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JANS2N3810 is a dual PNP bipolar junction transistor array designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a 50mA maximum collector current. With a minimum DC current gain of 150 at 1mA and 5V, it offers excellent amplification characteristics. The JANS2N3810 is rated for 350mW maximum power dissipation and operates across a wide temperature range of -65°C to 200°C. It is supplied in a TO-78-6 metal can package, suitable for through-hole mounting. This device meets MIL-PRF-19500/336 qualification standards, indicating its suitability for military and aerospace applications. Typical applications include switching and amplifier circuits where robust performance and high reliability are critical.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/336

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