JANS2N3810
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANS2N3810 is a dual PNP bipolar junction transistor array designed for demanding applications. This component features a 60V collector-emitter breakdown voltage and a 50mA maximum collector current. With a minimum DC current gain of 150 at 1mA and 5V, it offers excellent amplification characteristics. The JANS2N3810 is rated for 350mW maximum power dissipation and operates across a wide temperature range of -65°C to 200°C. It is supplied in a TO-78-6 metal can package, suitable for through-hole mounting. This device meets MIL-PRF-19500/336 qualification standards, indicating its suitability for military and aerospace applications. Typical applications include switching and amplifier circuits where robust performance and high reliability are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
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