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JANS2N2920U

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JANS2N2920U

NPN SMALL SIGNAL SILICON TRANSIS

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

The Microchip Technology JANS2N2920U is a dual NPN bipolar junction transistor (BJT) array designed for demanding applications. This surface-mount device, housed in a 6-SMD package, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 30mA per transistor. It features a high DC current gain (hFE) of 300 at 1mA and 5V, with a Vce(sat) of 300mV at 100µA collector current. The JANS2N2920U is qualified to MIL-PRF-19500/355, indicating its suitability for military-grade performance. Its robust construction allows operation across an extended temperature range of -65°C to 200°C. This component is often utilized in aerospace, defense, and high-reliability industrial systems requiring precise signal amplification and switching.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type2 NPN (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device Package6-SMD
GradeMilitary
QualificationMIL-PRF-19500/355

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