JANS2N2920U
NPN SMALL SIGNAL SILICON TRANSISManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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The Microchip Technology JANS2N2920U is a dual NPN bipolar junction transistor (BJT) array designed for demanding applications. This surface-mount device, housed in a 6-SMD package, offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 30mA per transistor. It features a high DC current gain (hFE) of 300 at 1mA and 5V, with a Vce(sat) of 300mV at 100µA collector current. The JANS2N2920U is qualified to MIL-PRF-19500/355, indicating its suitability for military-grade performance. Its robust construction allows operation across an extended temperature range of -65°C to 200°C. This component is often utilized in aerospace, defense, and high-reliability industrial systems requiring precise signal amplification and switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/355 |