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JANS2N2920L

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JANS2N2920L

NPN SMALL SIGNAL SILICON TRANSIS

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology's JANS2N2920L is a dual NPN bipolar junction transistor array housed in a TO-78-6 metal can package. This military-grade component offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 30mA. It features a minimum DC current gain (hFE) of 300 at 1mA collector current and 5V collector-emitter voltage, with a maximum Vce(sat) of 300mV at 100µA base current and 1mA collector current. The maximum collector cutoff current (ICBO) is 10µA. Designed for through-hole mounting, this device operates across an extended temperature range of -65°C to 200°C. It is qualified under MIL-PRF-19500/355, making it suitable for demanding applications in aerospace and defense sectors. The JANS2N2920L is supplied in bulk packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 NPN (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce300 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/355

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