JANS2N2920L
NPN SMALL SIGNAL SILICON TRANSISManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology's JANS2N2920L is a dual NPN bipolar junction transistor array housed in a TO-78-6 metal can package. This military-grade component offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 30mA. It features a minimum DC current gain (hFE) of 300 at 1mA collector current and 5V collector-emitter voltage, with a maximum Vce(sat) of 300mV at 100µA base current and 1mA collector current. The maximum collector cutoff current (ICBO) is 10µA. Designed for through-hole mounting, this device operates across an extended temperature range of -65°C to 200°C. It is qualified under MIL-PRF-19500/355, making it suitable for demanding applications in aerospace and defense sectors. The JANS2N2920L is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/355 |