JANKCA2N2920
TRANSISTOR DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JANKCA2N2920 is a dual NPN bipolar junction transistor (BJT) array designed for high-reliability applications. This through-hole component features a TO-78-6 metal can package and offers a collector-emitter breakdown voltage of 60V with a maximum collector current of 50mA. The JANKCA2N2920 exhibits a minimum DC current gain (hFE) of 300 at 1mA and 5V, and a saturation voltage (Vce(sat)) of 300mV at 100µA and 1mA. It is specified for a maximum power dissipation of 350mW and operates across an extended temperature range of -65°C to 200°C. This device meets MIL-PRF-19500/355 qualification standards, making it suitable for aerospace and defense systems. The transistor array is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/355 |