JANKCA2N2919
TRANSISTOR DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology's JANKCA2N2919 is a dual PNP bipolar junction transistor (BJT) array. This through-hole component, housed in a TO-78-6 metal can package, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a minimum DC current gain (hFE) of 150 at 1mA collector current and 5V Vce, and a Vce saturation of 300mV at 100µA base current and 1mA collector current, it is suitable for demanding applications. The device operates within a temperature range of -65°C to 200°C (TJ) and has a power dissipation of 350mW. This JANKCA2N2919 is qualified to MIL-PRF-19500/355 and finds use in military and aerospace applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/355 |
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