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JAN2N6989U/TR

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JAN2N6989U/TR

TRANSISTOR QUAD SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JAN2N6989U-TR is a quad PNP bipolar junction transistor array designed for high-reliability applications. This military-grade component, qualified under MIL-PRF-19500/559, features four independent PNP transistors in a single 6-SMD package. Each transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA, with a power dissipation capability of 1W. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 1V at 50mA/500mA. Collector cutoff current (ICBO) is rated at a maximum of 10nA. This transistor array is suitable for use in aerospace, defense, and other demanding electronic systems requiring robust performance across a wide operating temperature range of -65°C to 200°C. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, No Lead
Mounting TypeSurface Mount
Transistor Type4 PNP (Quad)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max1W
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device Package6-SMD
GradeMilitary
QualificationMIL-PRF-19500/559

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