JAN2N6989U/TR
TRANSISTOR QUAD SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology JAN2N6989U-TR is a quad PNP bipolar junction transistor array designed for high-reliability applications. This military-grade component, qualified under MIL-PRF-19500/559, features four independent PNP transistors in a single 6-SMD package. Each transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA, with a power dissipation capability of 1W. The device exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a Vce(sat) of 1V at 50mA/500mA. Collector cutoff current (ICBO) is rated at a maximum of 10nA. This transistor array is suitable for use in aerospace, defense, and other demanding electronic systems requiring robust performance across a wide operating temperature range of -65°C to 200°C. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 4 PNP (Quad) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | 6-SMD |
| Grade | Military |
| Qualification | MIL-PRF-19500/559 |