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JAN2N4854

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JAN2N4854

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 40V 600mA 600mW Through Hole TO-78-6

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type1 NPN, 1 PNP
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max600mW
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)40V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/421

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