JAN2N3810
TRANS 2PNP 60V 0.05A TO78Manufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Microchip Technology JAN2N3810 is a dual PNP bipolar junction transistor (BJT) designed for demanding applications. This component, packaged in a TO-78-6 metal can, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a minimum DC current gain (hFE) of 150 at 1mA and 5V, it provides reliable amplification. The device exhibits a low collector cutoff current of 10µA (ICBO) and a Vce saturation of 250mV at 100µA, 1mA. Rated for a maximum power dissipation of 350mW and operating across an extended temperature range of -65°C to 200°C, the JAN2N3810 meets stringent military specifications, including qualification under MIL-PRF-19500/336. This through-hole mounted transistor array is suitable for use in aerospace, defense, and high-reliability industrial systems requiring robust performance and environmental resilience.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-78-6 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-78-6 |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
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