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JAN2N3810

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JAN2N3810

TRANS 2PNP 60V 0.05A TO78

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

Quality Control: Learn More

Microchip Technology JAN2N3810 is a dual PNP bipolar junction transistor (BJT) designed for demanding applications. This component, packaged in a TO-78-6 metal can, offers a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a minimum DC current gain (hFE) of 150 at 1mA and 5V, it provides reliable amplification. The device exhibits a low collector cutoff current of 10µA (ICBO) and a Vce saturation of 250mV at 100µA, 1mA. Rated for a maximum power dissipation of 350mW and operating across an extended temperature range of -65°C to 200°C, the JAN2N3810 meets stringent military specifications, including qualification under MIL-PRF-19500/336. This through-hole mounted transistor array is suitable for use in aerospace, defense, and high-reliability industrial systems requiring robust performance and environmental resilience.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-78-6 Metal Can
Mounting TypeThrough Hole
Transistor Type2 PNP (Dual)
Operating Temperature-65°C ~ 200°C (TJ)
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 1mA, 5V
Frequency - Transition-
Supplier Device PackageTO-78-6
GradeMilitary
QualificationMIL-PRF-19500/336

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