2N6989
TRANS 4NPN 50V 0.8A TO116Manufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology's 2N6989 is a quad NPN bipolar transistor array designed for demanding applications. This through-hole component, packaged in a TO-116 (14-DIP) case, offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 800mA. Featuring a maximum power dissipation of 1.5W, the 2N6989 exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. The specified Vce(sat) is 1V at 50mA base current and 500mA collector current. Operating across a wide temperature range of -65°C to 200°C, this array is suitable for use in industrial, automotive, and defense systems requiring robust switching and amplification characteristics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 14-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Transistor Type | 4 NPN (Quad) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 1.5W |
| Current - Collector (Ic) (Max) | 800mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-116 |
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