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2N6987U

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2N6987U

NPN TRANSISTOR

Manufacturer: Microchip Technology

Categories: Bipolar Transistor Arrays

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Microchip Technology's 2N6987U is a high-performance Bipolar Junction Transistor (BJT) array featuring four PNP transistors. This device offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA, with a power dissipation rating of 1W. The 2N6987U is designed for surface mount applications and is supplied in a 20-CLCC package, measuring 8.89x8.89mm. It exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V. The collector cutoff current (ICBO) is a maximum of 10µA. Applications for this component include high-reliability military and aerospace systems, as well as industrial control and power switching circuits. The Vce saturation is specified at 1.6V maximum for an Ib of 50mA and an Ic of 500mA.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case20-CLCC
Mounting TypeSurface Mount
Transistor Type4 PNP (Quad)
Operating Temperature-65°C ~ 200°C
Power - Max1W
Current - Collector (Ic) (Max)600mA
Voltage - Collector Emitter Breakdown (Max)60V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device Package20-CLCC (8.89x8.89)

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