2N5796AU/TR
DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology's 2N5796AU-TR is a dual PNP bipolar junction transistor array designed for demanding applications. This surface mount component, packaged in a 6-SMD, No Lead format on tape and reel, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. It features a minimum DC current gain (hFE) of 100 at 150mA and 10V, with a Vce saturation of 1.6V at 50mA and 500mA. The device maintains a collector cutoff current of 10µA (ICBO) and can dissipate up to 600mW of power. Operating across a wide temperature range of -65°C to 175°C, this transistor array is suitable for use in industrial control systems, power management circuits, and communication infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U |