2N5795AU/TR
DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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Microchip Technology's 2N5795AU-TR is a dual PNP bipolar junction transistor (BJT) array designed for surface mount applications. This component features two independent PNP transistors within a single package, offering a compact solution for various circuit designs. Key specifications include a collector emitter breakdown voltage of 60V and a maximum continuous collector current of 600mA. The device exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V. Its saturation voltage (Vce Sat) is specified at a maximum of 1.6V for 50mA base current and 500mA collector current. The 2N5795AU-TR is supplied in a 6-SMD, No Lead package on a tape and reel for automated assembly. This transistor array is suitable for use in telecommunications and industrial control applications. The maximum power dissipation is 600mW, and it operates across an extended temperature range of -65°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U |