2N5793U/TR
DUAL SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Bipolar Transistor Arrays
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The Microchip Technology 2N5793U-TR is a dual NPN bipolar junction transistor array designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 600mA, with a maximum power dissipation of 600mW. The device exhibits a minimum DC current gain (hFE) of 40 at 150mA and 10V, and a Vce saturation of 900mV at 30mA collector current for a 30mA base current. It operates within a junction temperature range of -65°C to 200°C. The 2N5793U-TR is supplied in a 6-SMD, No Lead package, delivered on tape and reel. This transistor array finds utility in various industrial and consumer electronics applications requiring matched dual NPN transistor performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | U |